EQUATION FOR INTENSITY OF LIGHT EPSILON FREE

Active dielectric antenna on chip for spatial light modulation. Plasmonic nanostructured metal–oxide–semiconductor reflection modulators. Olivieri A, Chen CK, Hassan S, Lisicka-Skrzek E, Tait RN et al. Fabrication of a plasmonic modulator incorporating an overlaid grating coupler. Hassan SA, Lisicka-Skrzek E, Olivieri A, Tait RN, Berini P. PlasMOStor: a metal−oxide−Si field effect plasmonic modulator. doi: 10.1038/nphoton.2015.127ĭionne JA, Diest K, Sweatlock KA, Atwater HA. All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale. Haffner C, Heni W, Fedoryshyn Y, Niegemann J, Melikyan A et al. An ultralow power athermal silicon modulator.

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Our theoretical and experimental studies reveal that the dual ENZ mode scheme in the SIS configuration leverages the large modulation depth, extended spectral bandwidth together with high speed switching, thus holding great promise for achieving electrically addressed spatial light modulation in near- to mid-infrared regions.Įfron U, Liverscu G.

EQUATION FOR INTENSITY OF LIGHT EPSILON FREE

The non-resonant and low-loss deep nanotrench framework allows the free space light to be modulated efficiently via interaction of dual ENZ modes in an elongated manner. Such a SIS junction can build up two distinct ENZ layers arising from the induced charge-carriers of opposite polarities adjacent to both faces of the dielectric layer. In this paper, we proposed and demonstrated a dual-ENZ mode scheme for spatial light modulation with a TCOs/dielectric/silicon nanotrench configuration for the first time. Further, for the ENZ based spatial light modulation, the requirement of resonant coupling inevitably leads to small absolute modulation depth and limited spectral bandwidth as restricted by the properties of the plasmonic or high-Q resonance systems. Relying on the quantum confinement of charge-carriers in the doped semiconductor, the fundamental limitation of achieving high modulation efficiency with MIS junction is that only a nanometer-thin ENZ confinement layer can contribute to the strength of E-A.

The ENZ modes can be electrically toggled between on and off states with a classic metal-insulator-semiconductor (MIS) configuration and therefore allow access to electro-absorption (E-A) modulation. Epsilon-near-zero (ENZ) modes have attracted extensive interests due to its ultrasmall mode volume resulting in extremely strong light-matter interaction (LMI) for active optoelectronic devices.

Equation for intensity of light epsilon